Thin-film ferroelectrics of PZT of sol-gel processing

The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4*10/sup 6/ V/m and 0.36 C/m/sup 2/. The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.<
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